tn0106 features ? low threshold - 2.0v max. ? high input impedance ? low input capacitance - 50pf typical ? fast switching speeds ? low on-resistance ? free from secondary breakdown ? low input and output leakage applications ? logic level interfaces C ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic drives ? analog switches ? general purpose line drivers ? telecom switches general description this low threshold, enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode vertical dmos fet absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. to-92 (n3) gate source drain yy = year sealed ww = week sealed = ?green? packaging s itn 0106 yyww to-92 (n3) product marking package may or may not include the following marks: si or pin confgurations ordering information device package wafer / die options to-92 nw (die in wafer form) nj (die on adhesive tape) nd (die in waffe pack) tn0106 TN0106N3-G tn1506nw tn1506nj tn1506nd for packaged products, -g indicates package is rohs compliant (green). devices in wafer / die form are rohs compliant (green). refer to die specifcation vf15 for layout and dimensions. product summary device bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (a) v gs(th) (max) (v) TN0106N3-G 60 3.0 2.0 2.0 supertex inc. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
2 tn0106 electrical characteristics (t a = 25 o c unless otherwise specifed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage 60 - - v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 0.6 - 2.0 v v gs = v ds , i d = 0.5ma v gs(th) change in v gs(th) with temperature - -3.2 -5.0 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 10 a v gs = 0v, v ds = max rating - - 500 v ds = 0.8 max rating, v gs = 0v,t a = 125c i d(on) on-state drain current 0.75 1.4 - a v gs = 5.0v, v ds = 25v 2.0 3.4 - v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - 2.0 4.5 v gs = 4.5v, i d = 250ma - 1.6 3.0 v gs = 10v, i d = 500ma r ds(on) change in r ds(on) with temperature - 0.6 1.1 %/ o c v gs = 10v, i d = 500ma g fs forward transductance 225 400 - mmho v ds = 25v, i d = 500ma c iss input capacitance - 50 60 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 25 35 c rss reverse transfer capacitance - 4.0 8.0 t d(on) turn-on delay time - 2.0 5.0 ns v dd = 25v, i d = 1.0a, r gen = 25 t r rise time - 3.0 5.0 t d(off) turn-off delay time - 6.0 7.0 t f fall time - 3.0 6.0 v sd diode forward voltage drop 1.0 1.5 v v gs = 0v, i sd = 500ma t rr reverse recovery time - 400 - ns v gs = 0v, i sd = 500ma notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. notes: ? i d (continuous) is limited by max rated t j . thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (a) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr ? (ma) i drm (a) to-92 350 2.0 1.0 125 170 350 2.0 switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t . t (on) t d(on) t (off) t d(off) t r input input output 10v vdd r gen 0v 0v t f supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
3 tn0106 typical performance curves output characteristics 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 v ds (volts) i d (amperes) saturation characteristics 0 2.0 4.0 6.0 8.0 10 maximum rated safe operating area 1.0 10 100 1000 10 1.0 0.1 0.01 v ds (volts) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 t p (seconds) transconductance vs. drain current 0.5 0.4 0.3 0.2 0.1 0 0 0.6 1.2 1.8 2.4 3.0 g fs (siemens) i d (amperes) power dissipation vs. case temperature 0 25 50 75 100 125 150 2.0 1.0 0 t c ( o c) p d (watts) v ds = 25v to-92 to-92 t c = 25 o c p d = 1w to-92 (dc) to-92 (pulsed) 8v 6v 4v 2v t a = -55 o c v gs = 10v t c = 25 o c v ds (volts) 8v 6v 4v 2v v gs = 10v i d (amperes) t a = 25 o c t a = 150 o c i d (amperes) 5.0 4.0 3.0 2.0 1.0 0 supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
4 tn0106 typical performance curves (cont.) gate drive dynamic characteristics q g (nanocoulombs) v gs (volts) v gs(th) (normalized) r ds(on) (normalized) v (th) and r ds variation with temperature on-resistance vs. drain current i d (amperes) r ds(on) (ohms) bv dss v ar i at i on w i t h t emperature bv dss (normalized) t j ( o c) transfer characteristics v gs (volts) i d ( amperes ) capacitance vs. drain-to-source voltage 100 75 50 25 0 c (picofarads) v ds (volts) 0 10 20 30 40 0 2.0 4.0 6.0 8.0 10 3.0 2.4 1.8 1.2 0.6 0 -50 0 50 100 150 1.3 1.2 1.1 1.0 0.9 0.8 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 1.4 1.2 1.0 0.8 0.6 0.4 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 -50 0 50 100 150 f = 1.0mhz 50pf v gs = 5.0v v ds = 25v t a = -55 o c 25 o c 150 o c v (th) @ 0.5ma r ds(on) @ 10v, 0.5a c iss c oss c rss v ds = 10v 55pf v gs = 10v t j ( o c) v ds = 40v 1.4 1.2 1.0 0.8 0.6 0.4 supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
5 tn0106 (the package drawing(s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-tn0106 b080811 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not specifed in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?201 1 supertex inc. a ll rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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